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| DATA SHEET MICRONAS HAL1000 Programmable Hall Switch Edition March 4, 2004 6251-528-1DS MICRONAS HAL1000 Contents Page 3 3 3 4 4 4 4 4 4 5 5 6 10 11 12 12 16 16 16 17 17 18 19 19 21 21 21 22 22 23 23 23 25 26 27 27 28 Section 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. 2. 2.1. 2.2. 2.3. 2.4. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 3.8. 4. 4.1. 4.2. 4.3. 4.4. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6. Title Introduction Major Applications Features Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability Pin Connections and Short Descriptions Functional Description General Function Digital Signal Processing and EEPROM General Calibration Procedure Example: Calibration of a Position Switch Specifications Outline Dimensions Dimensions of Sensitive Area Position of Sensitive Area Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Typical Characteristics Application Notes Application Circuit Temperature Compensation Ambient Temperature EMC and ESD Programming of the Sensor Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information Data Sheet History DATA SHEET 2 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 1.1. Major Applications Due to the sensor's versatile programming characteristics, the HAL1000 is the optimal system solution for applications which require very precise contactless switching: - end point detection Programmable Hall Switch Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL1000 is a programmable Hall switch. The major sensor characteristics, the two switching points BON and BOFF, are programmable for the application. The sensor can be programmed to be unipolar or latching, sensitive to the magnetic north pole or sensitive to the south pole, with normal or with an electrically inverted output signal. Several examples are shown in Fig. 2-4 through Fig. 2-7. The HAL1000 is based on the HAL 8xx family and features a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a push-pull output stage, an EEPROM memory with redundancy and lock function for the calibration data, a serial interface for programming the EEPROM, and protection devices at all pins. Internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress effects do not degrade the sensor accuracy. The HAL1000 is programmable by modulating the supply voltage. No additional programming pin is needed. Programming is simplified through the use of a 2-point calibration. Calibration is accomplished by adjusting the sensor output directly to the input signal. Individual adjustment of each sensor during the customer's manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated for the final assembly. This offers a low-cost alternative for all applications that presently require mechanical adjustment or other system calibration. In addition, the temperature compensation of the Hall IC can be tailored to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with constant switching points. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. The sensor is designed and produced in sub-micron CMOS technology for use in hostile industrial and automotive applications with nominal supply voltage of 5 V in the ambient temperature range from -40 C up to 150 C. The HAL1000 is available in the leaded packages TO92UT-1 and TO92UT-2. - level switch (e.g. liquid level) - electronic fuse (current measurement) WARNING: DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS. 1.2. Features - high-precision Hall switch with programmable switching points and switching behavior - switching points programmable from -150 mT up to 150 mT in steps of 0.5% of the magnetic field range - multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function - temperature characteristics are programmable for matching all common magnetic materials - programming through a modulation of the supply voltage - operates from -40 C up to 150 C ambient temperature - operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V - operates with static magnetic fields and dynamic magnetic fields up to 2 kHz - magnetic characteristics extremely robust against mechanical stress effects - overvoltage and reverse-voltage protection at all pins - short-circuit protected push-pull output - EMC and ESD optimized design Micronas March 4, 2004; 6251-528-1DS 3 HAL1000 1.3. Marking Code The HAL1000 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range A HAL1000 1000A K 1000K Pin No. 1.3.1. Special Marking of Prototype Parts 1 Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 2 3 VDD GND OUT OUT IN Pin Name Type 1.6. Solderability All packages according to IEC68-2-58 DATA SHEET During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. 1.7. Pin Connections and Short Descriptions Short Description Supply Voltage and Programming Pin Ground Push-Pull Output and Selection Pin 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.3. on page 22. 1 VDD OUT 3 2 GND Fig. 1-1: Pin configuration 1.5. Hall Sensor Package Codes HALxxxxPA-T Temperature Range: A or K Package: UT for TO92UT Type: 1000 Example: HAL1000UT-K Type: 1000 Package: TO92UT Temperature Range: TJ = -40C to +140C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". 4 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 ates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The digital output is switched off during the communication. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes of the switching points. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant EEPROM cells. In addition, the HAL1000 is equipped with devices for overvoltage and reverse-voltage protection at all pins. 2. Functional Description 2.1. General Function The HAL1000 is a monolithic integrated circuit which provides a digital output signal. The sensor is based on the HAL 8xx design. All blocks before the comparator are identical to the HAL 810 and the signal processing is very similar. The Hall plate is sensitive to magnetic north and south polarity. The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. This voltage is converted to a digital value and processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers. The function and the parameters for the DSP are explained in Section 2.2. on page 6. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2-1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor gener- HAL 1000 8 VDD (V) 7 6 5 VDD VOUT (V) VDD GND OUT protocol digital output Fig. 2-1: Programming with VDD modulation VDD Internally stabilized Supply and Protection Devices Temperature Dependent Bias Oscillator Protection Devices Switched Hall Plate A/D Converter Digital Signal Processing Digital Output 100 OUT EEPROM Memory Supply Level Detection Lock Control GND Fig. 2-2: HAL1000 block diagram Micronas March 4, 2004; 6251-528-1DS 5 HAL1000 DATA SHEET ADC-READOUT Register 14 bit Digital Signal Processing Digital Output A/D Converter Digital Filter Multiplier Adder Comparator Lock Control TC 6 bit TCSQ 5 bit MODE Register RANGE FILTER 3 bit 3 bit SENSITIVITY 14 bit VOQ 11 bit LOWLEVEL 10 bit HIGHLEVEL 11 bit LOCKR 1 bit Micronas Registers EEPROM Memory Fig. 2-3: Details of EEPROM and Digital Signal Processing 2.2. Digital Signal Processing and EEPROM The DSP is the main part of the sensor and performs the signal processing. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2-3. The output switches on (low) if the signal voltage is higher than the High-Level, and switches off (high) if the signal falls below the Low-Level. Several examples of different switching characteristics are shown in Fig. 2-4 to Fig. 2-7. - The parameter VOQ (Output Quiescent Voltage) corresponds to the signal voltage at B = 0 mT. - The parameter Sensitivity defines the magnetic sensitivity: Sensitivity = VSignal B Terminology: SENSITIVITY: name of the register or register value Sensitivity: name of the parameter - The signal voltage can be calculated as: EEPROM Registers: The EEPROM registers include three groups: Group 1 contains the registers for the adaption of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC and TCSQ for the temperature characteristics of the magnetic sensitivity and thereby for the switching points. Group 2 contains the registers for defining the switching points: SENSITIVITY, VOQ, LOW-LEVEL, and HIGH-LEVEL. The comparator compares the processed signal voltage with the reference values Low-Level and HighLevel. Therefore, the switching points are programmed by setting the SENSITIVITY, VOQ, LOW-LEVEL, and HIGH-LEVEL registers. The available Micronas software calculates the best parameter set respecting the ranges of each register. Group 3 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production and are read-only for the customer. These registers are used for oscillator frequency trimming, A/D converter offset compensation, and several other special settings. VSignal Sensitivity x B + VOQ 6 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 VSignal High-Level VSignal VOQ High-Level Low-Level Low-Level VOQ B VOUT VDD VOUT VDD B B Fig. 2-4: HAL1000 with unipolar behavior B Fig. 2-6: HAL1000 with unipolar inverted behavior VSignal High-Level High-Level VSignal VOQ Low-Level Low-Level VOQ B VOUT VDD B VOUT VDD B Fig. 2-5: HAL1000 with latching behavior B Fig. 2-7: HAL1000 with unipolar behavior sensitive to the other magnetic polarity Micronas March 4, 2004; 6251-528-1DS 7 HAL1000 DATA SHEET Filter Frequency Filter = 2 kHz 2000 ADC-READOUT RANGE -3968...3967 -1985...1985 -5292...5290 -2646...2645 -1512...1511 80 Hz 160 Hz 1500 ADCREADOUT 1000 500 0 -500 -1000 -1500 -2000 -200-150-100 -50 Range 150 mT Range 90 mT Range 60 mT Range 30 mT 0 50 100 150 200 mT B 500 Hz 1 kHz 2 kHz Note: The maximum and minimum ADC-READOUT must not be exceeded during calibration of the sensor and operation near the switching points. Range The RANGE bits are the three lowest bits of the MODE register; they define the magnetic field range of the A/ D converter. Magnetic Field Range RANGE 0 4 5 1 6 2 7 3 Fig. 2-8: Typical ADC-READOUT versus magnetic field for filter = 2 kHz -30 mT...30 mT -40 mT...40 mT -60 mT...60 mT An external magnetic field generates a Hall voltage at the Hall plate. The ADC converts this amplified Hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. Positive values correspond to a magnetic north pole on the branded side of the package. The digital signal is filtered in the internal low-pass filter and is then readable in the ADC-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating range of the A/D converter is from - 30 mT ... +30 mT up to -150 mT ... +150 mT. The ADC-READOUT at any given magnetic field depends on the programmed magnetic field range and also on the filter frequency. Fig. 2-8 shows the typical ADC-READOUT values for the different magnetic field ranges with the filter frequency set to 2 kHz. The relationship between the minimum and maximum ADC-READOUT values and the filter frequency setting can be seen in the following table. -75 mT...75 mT -80 mT...80 mT -90 mT...90 mT -100 mT...100 mT -150 mT...150 mT Filter The FILTER bits are the three highest bits of the MODE register; they define the -3 dB frequency of the digital low pass filter. -3 dB Frequency 80 Hz 160 Hz 500 Hz 1 kHz 2 kHz FILTER 0 1 2 3 4 8 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 Reference Levels The LOW-LEVEL and HIGH-LEVEL registers contain the reference values of the comparator. The Low-Level is programmable between 0 V and VDD/2. The register can be changed in steps of 2.44 mV. The High-Level is programmable between 0 V and VDD in steps of 2.44 mV. The four parameters Sensitivity, VOQ, Low-Level, and High-Level define the switching points BON and BOFF. For calibration in the system environment, a 2-point adjustment procedure (see Section 2.3.) is recommended. The suitable parameter set for each sensor can be calculated individually by this procedure. TC and TCSQ The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the switching points can be stabilized over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about -3100 ppm/K up to 400 ppm/K and quadratic coefficients from about -5 ppm/K to 5 ppm/K. Please refer to Section 4.2. on page 21 for the recommended settings for different linear temperature coefficients. LOCKR By setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. Sensitivity The SENSITIVITY register contains the parameter for the multiplier in the DSP. Sensitivity is programmable between -4 and 4 in steps of 0.00049. Sensitivity = 1 corresponds to an increase of the signal voltage by VDD if the ADC-READOUT increases by 2048. VOQ Warning: The LOCKR register cannot be reset! ADC-READOUT The VOQ register contains the parameter for the adder in the DSP. VOQ is the signal voltage without external magnetic field (B = 0 mT, respectively ADC-READOUT = 0) and programmable from -VDD up to VDD. For VDD = 5 V, the register can be changed in steps of 4.9 mV. Note: If VOQ is programmed to a negative voltage, the maximum signal voltage is limited to: VSignal max = VOQ + VDD This 14-bit register delivers the actual digital value of the applied magnetic field after filtering but before the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment. Micronas March 4, 2004; 6251-528-1DS 9 HAL1000 2.3. General Calibration Procedure For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input or calculating of the register values. In this section, the programming of the sensor using this tool is explained. Please refer to Section 5. on page 23 for information about programming without this tool. For the individual calibration of each sensor in the customer`s application, a two-point adjustment is recommended (see Fig. 2-9 for an example). When using the application kit, the calibration can be done in three steps: DATA SHEET Note: The magnetic south pole on the branded side generates negative ADC-READOUT values, the north polarity positive values. Then, set the system to the calibration point where the sensor output must be low, press the key "Readout BON" and get the second ADC-READOUT value. Now, adjust the hysteresis to the desired value. The hysteresis is the difference between the switching points and suppresses oscillation of the output signal. With 100% hysteresis, the sensor will switch low and high exactly at the calibration points. A lower value will adjust the switching points closer together. Fig. 2-9 shows an example with 80% hysteresis. By pressing the key "calibrate and store", the software will calculate the corresponding parameters for Sensitivity, VOQ, Low-Level, High-Level and store these values in the EEPROM. This calibration must be done individually for each sensor. The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary. Step 1: Input of the registers which need not be adjusted individually The magnetic circuit, the magnetic material with its temperature characteristics, and the filter frequency, are given for this application. Therefore, the values of the following registers should be identical for all sensors in the application. - FILTER (according to the maximum signal frequency) The 500 Hz range is recommended for highest accuracy. - RANGE (according to the maximum magnetic field at the sensor position) - TC and TCSQ (depends on the material of the magnet and the other temperature dependencies of the application) Write the appropriate settings into the HAL1000 registers. VOUT Hysteresis (here 80 %) Sensor switched off Sensor switched on position Calibration points Fig. 2-9: Characteristics of a position switch Step 2: Calculation of the Sensor Parameters Fig. 2-9 shows the typical characteristics for a contactless switch. There is a mechanical range where the sensor must be switched high and where the sensor must be switched low. Set the system to the calibration point where the sensor output must be high, and press the key "Readout BOFF". The result is the corresponding ADC-READOUT value. Step 3: Locking the Sensor The last step is activating the LOCK function with the "lock" key. The sensor is now locked and does not respond to any programming or reading commands. Warning: The LOCKR register cannot be reset! 10 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 2.4. Example: Calibration of a Position Switch The following description explains the calibration procedure using a position switch as an example. - The mechanical switching points are given. - temperature coefficient of the magnet: -500 ppm/K Step 1: Input of the registers which need not be adjusted individually The register values for the following registers are given for all sensors in the application: - FILTER Select the filter frequency: 500 Hz - RANGE Select the magnetic field range: 30 mT - TC For this magnetic material: 6 - TCSQ For this magnetic material: 14 Enter these values in the software, and use the "write and store" command to store these values permanently in the registers. Step 2: Calculation of the Sensor Parameters Set the system to the calibration point where the sensor output must be high, and press "Readout BOFF". Set the system to the calibration point where the sensor output must be low, and press "Readout BON" Now, adjust the hysteresis to 80%, and press the key "calibrate and store". Step 3: Locking the Sensor The last step is activating the LOCK function with the "LOCK" command. The sensor is now locked and does not respond to any programming or reading commands. Please note that the LOCK function becomes effective after power-down and power-up of the HallIC. Warning: The LOCKR register cannot be reset! Micronas March 4, 2004; 6251-528-1DS 11 HAL1000 3. Specifications 3.1. Outline Dimensions DATA SHEET Fig. 3-1: TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread Weight approximately 0.12 g 12 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 Fig. 3-2: TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g Micronas March 4, 2004; 6251-528-1DS 13 HAL1000 DATA SHEET Fig. 3-3: TO92UT-2: Dimensions ammopack inline, not spread 14 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 Fig. 3-4: TO92UT-1: Dimensions ammopack inline, spread Micronas March 4, 2004; 6251-528-1DS 15 HAL1000 3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm DATA SHEET 3.3. Position of Sensitive Area TO92UT-1/-2 y = 1.5 mm 0.3 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground. Symbol Parameter Pin No. Min. VDD VDD VOUT VOUT - VDD IOUT tSh TJ NPROG 1) 2) 3) 4) 5) 6) Limit Values Max. 8.5 14.41) 2) 8.53) 14.43) 2) 2 -10 - -40 -40 - 10 10 1705) 150 100 Unit Supply Voltage Supply Voltage Output Voltage Excess of Output Voltage over Supply Voltage Continuous Output Current Output Short Circuit Duration Junction Temperature Range Number of Programming Cycles 1 1 3 3,1 3 3 -8.5 -14.41) 2) -56) -56) V V V V mA min C C as long as TJmax is not exceeded t < 10 min (VDDmin = -15 V for t < 1 min, VDDmax = 16 V for t < 1 min) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to -14 V) t < 2 ms t < 1000 h internal protection resistor = 100 16 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%. 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground. Symbol Parameter Pin No. Min. VDD IOUT RL CL Supply Voltage Continuous Output Current Load Resistor Load Capacitance 1 3 3 3 4.5 -1 4.7 0.33 Limit Values Typ. 5 - - 10 Max. 5.5 1 - 1000 V mA k nF Unit Micronas March 4, 2004; 6251-528-1DS 17 HAL1000 3.6. Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 5.5 V, after programming, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. Symbol Parameter Pin No. Min. IDD VDDZ VOZ VOUTH VOUTL fADC fADC tr(O) Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output High Voltage Output Low Voltage Internal ADC Frequency Internal ADC Frequency over Temperature Range Response Time of Output 1 1 3 3 3 - - 3 120 110 - 4.65 Limit Values Typ. 7 17.5 17 4.8 0.2 128 128 5 4 2 1 0.35 140 150 10 8 4 2 Max. 10 20 19.5 mA V V V V kHz kHz ms ms ms ms Unit Test Conditions DATA SHEET IDD = 25 mA, TJ = 25 C, t = 20 ms IO = 10 mA, TJ = 25 C, t = 20 ms VDD = 5 V, -1 mA IOUT 1mA VDD = 5 V, -1 mA IOUT 1mA TJ = 25 C VDD = 4.5 V to 8.5 V 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz CL = 10 nF, time from 10% to 90% of final output voltage for a steplike signal Bstep from 0 mT to Bmax CL = 10 nF 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz CL = 10 nF, 90% of VOUT BAC < 10 mT; 3 dB Filter frequency = 2 kHz td(O) tPOD Delay Time of Output Power-Up Time (Time to reach stabilized Output Voltage) 3 0.1 6 5 3 2 0.5 11 9 5 3 - 200 ms ms ms ms ms kHz K/W BW RthJA TO92UT-1 TO92UT-2 Small Signal Bandwidth (-3 dB) Thermal Resistance Junction to Soldering Point 3 - - - 2 150 18 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 3.7. Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 5.5 V, after programming, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. Symbol Parameter Pin No. Min. BOffset BOffset/T Magnetic Offset Magnetic Offset Change due to TJ 3 -1 -15 Limit Values Typ. 0 0 Max. 1 15 mT T/K B = 0 mT, IOUT = 0 mA, TJ = 25 C B = 0 mT, IOUT = 0 mA Unit Test Conditions 3.8. Typical Characteristics mA 20 15 IDD 10 5 0 -5 -10 -15 -20 -15 -10 IDD mA 10 VDD = 5 V 8 6 4 TA = -40 C TA = 25 C TA=150 C -5 0 5 10 VDD 15 20 V 2 0 -50 0 50 100 150 TA 200 C Fig. 3-5: Typical current consumption versus supply voltage Fig. 3-6: Typical current consumption versus ambient temperature Micronas March 4, 2004; 6251-528-1DS 19 HAL1000 DATA SHEET mA 10 TA = 25 C VDD = 5 V IDD 8 mT 1.0 0.8 BOffset 0.6 0.4 TC = 16, TCSQ = 8 TC = 0, TCSQ = 12 TC = -20, TCSQ = 12 6 0.2 -0.0 4 -0.2 -0.4 2 -0.6 -0.8 0 -1.5 -1.0 -0.5 0.0 0.5 1.0 IOUT 1.5 mA -1 -50 0 50 100 150 TA 200 C Fig. 3-7: Typical current consumption versus output current Fig. 3-9: Typical magnetic offset versus ambient temperature % 120 1/sensitivity 100 80 60 40 TC = 16, TCSQ = 8 20 TC = 0, TCSQ = 12 TC = -20, TCSQ = 12 TC = -31, TCSQ = 0 0 -50 0 50 100 150 TA 200 C Fig. 3-8: Typical 1/sensitivity versus ambient temperature 20 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 4. Application Notes 4.1. Application Circuit For EMC protection, it is recommended to connect one ceramic 4.7 nF capacitor between ground and the supply voltage, and between ground and the output pin. In addition, the input of the controller unit should be pulled-down with a resistor of 10 k or more and a ceramic 4.7 nF capacitor. Temperature Coefficient of Magnet (ppm/K) 400 300 200 100 0 TC TCSQ 31 28 24 21 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 6 7 8 9 10 10 11 11 11 12 12 12 13 13 13 13 14 14 14 14 15 15 15 16 16 16 17 17 17 18 18 19 19 20 WARNING: PLEASE NOTE THAT DURING PROGRAMMING, THE SENSOR WILL BE SUPPLIED REPEATEDLY WITH THE PROGRAMMING VOLTAGE OF 12.5 V FOR 100 MS. ALL COMPONENTS CONNECTED TO THE VDD LINE AT THIS TIME MUST BE ABLE TO RESIST THIS VOLTAGE. -50 -90 -130 -170 -200 -240 -280 -320 VDD -360 -410 OUT HAL1000 4.7 nF 4.7 nF GND 4.7 nF 10 k -450 C -500 -550 -600 -650 -700 Fig. 4-1: Recommended application circuit 4.2. Temperature Compensation The relationship between the temperature coefficient of the magnet and the corresponding TC and TCSQ codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. The HAL8xx and HAL1000 contain the same temperature compensation circuits. If an optimal setting for the HAL8xx is already available, the same settings may be used for the HAL1000. -750 -810 -860 -910 -960 -1020 -1070 -1120 -1180 -1250 -1320 -1380 -1430 Micronas March 4, 2004; 6251-528-1DS 21 HAL1000 4.3. Ambient Temperature DATA SHEET Temperature Coefficient of Magnet (ppm/K) -1500 -1570 -1640 -1710 -1780 -1870 -1950 -2030 -2100 -2180 -2270 -2420 -2500 -2600 -2700 -2800 -2900 -3000 -3100 TC TCSQ -12 -13 -14 -15 -16 -17 -18 -19 -20 -21 -22 -24 -25 -26 -27 -28 -29 -30 -31 20 20 21 21 22 22 23 23 24 24 25 26 27 27 28 28 29 30 31 Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions and continuous operation, the following equation applies: T = IDD * VDD * RthJA For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the temperature difference T = 11 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax -T 4.4. EMC and ESD The HAL1000 is designed for a stabilized 5 V supply. EMC testing related to "Road vehicles - Electrical disturbances from conduction and coupling - Part 2: Electrical transient conduction along supply lines only." (product standard ISO 7637-2) is not relevant for these applications. For applications with disturbances by capacitive or inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4-1 is recommended. 22 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. - Read a register (see Fig. 5-3) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. - Programming the EEPROM cells (see Fig. 5-4) After processing this command, the sensor answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage. 5. Programming of the Sensor 5.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram which is available on the output pin. The bits in the serial telegram have a different bit time for the VDD-line and the output. The bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical "0" is coded as no voltage change within the bit time. A logical "1" is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs. tr VDDH logical 0 VDDL tp0 tf tp0 or 5.2. Definition of the Telegram Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). There are 4 kinds of telegrams: - Write a register (see Fig. 5-2) After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the Fig. 5-1: Definition of logical 0 and 1 bit VDDH logical 1 VDDL tp1 tp0 or tp1 tp0 Table 5-1: Telegram parameters Symbol Parameter Pin No. Min. VDDL VDDH tr tf tp0 tpOUT tp1 VDDPROG tPROG trp tfp tw Supply Voltage for Low Level during Programming Supply Voltage for High Level during Programming Rise time Fall time Bit time on VDD Bit time on output pin Voltage Change for logical 1 Supply Voltage for Programming the EEPROM Programming Time for EEPROM Rise time of programming voltage Fall time of programming voltage Delay time of programming voltage after Acknowledge 1 1 1 1 1 3 1, 3 1 1 1 1 1 1.7 2 50 12.4 95 0.2 0 0.5 0.7 1.75 3 65 12.5 100 0.5 5 6.8 Limit Values Typ. 5.6 8.0 Max. 6 8.5 0.05 0.05 1.8 4 80 12.6 105 1 1 1 V V ms ms ms ms % V ms ms ms ms tp0 is defined through the Sync Bit tpOUT is defined through the Acknowledge Bit % of tp0 or tpOUT Unit Remarks Micronas March 4, 2004; 6251-528-1DS 23 HAL1000 DATA SHEET WRITE Sync VDD Acknowledge VOUT COM CP ADR AP DAT DP Fig. 5-2: Telegram for coding a Write command READ Sync VDD Acknowledge VOUT DAT DP COM CP ADR AP Fig. 5-3: Telegram for coding a Read command trp VDDPROG ERASE, PROM, LOCK, and LOCKI Sync VDD Acknowledge VOUT tw COM CP ADR AP tPROG tfp Fig. 5-4: Telegram for coding the EEPROM programming 24 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 Data Bits (DAT) The 14 Data Bits contain the register information. 5.3. Telegram Codes Sync Bit Each telegram starts with the Sync Bit. This logical "0" pulse defines the exact timing for tp0. Command Bits (COM) The Command code contains 3 bits and is a binary number. Table 5-2 shows the available commands and the corresponding codes for the HAL1000. The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. In the Write command, the last bits are valid. If, for example, the TC register (6 bits) is written, only the last 6 bits are valid. In the Read command, the first bits are valid. If, for example, the TC register (6 bits) is read, only the first 6 bits are valid. Command Parity Bit (CP) This parity bit is "1" if the number of zeros within the 3 Command Bits is uneven. The parity bit is "0", if the number of zeros is even. Data Parity Bit (DP) This parity bit is "1" if the number of zeros within the binary number is even. The parity bit is "0" if the number of zeros is uneven. Address Bits (ADR) The Address code contains 4 bits and is a binary number. Table 5-3 shows the available addresses for the HAL1000 registers. Acknowledge After each telegram, the output answers with the Acknowledge signal. This logical "0" pulse defines the exact timing for tpOUT. Address Parity Bit (AP) This parity bit is "1" if the number of zeros within the 4 Address bits is uneven. The parity bit is "0" if the number of zeros is even. Table 5-2: Available commands Command READ WRITE PROM ERASE LOCK Code 2 3 4 5 7 Explanation read a register write a register program all nonvolatile registers (except the lock bits) erase all nonvolatile registers (except the lock bits) lock the whole device and switch permanently to the analog-mode Please note: The Micronas LOCK bit has already been set during production and cannot be reset. Micronas March 4, 2004; 6251-528-1DS 25 HAL1000 5.4. Number Formats Two-complementary number: DATA SHEET Binary number: The most significant bit is given as first, the least significant bit as last digit. Example: 101001 represents 41 decimal. Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: The first digit of positive numbers is "0", the rest of the number is a binary number. Negative numbers start with "1". In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add "1". Example: 0101001 represents +41 decimal 1010111 represents -41 decimal 0101001 represents +41 decimal 1101001 represents -41 decimal Table 5-3: Available register addresses Register LOW-LEVEL HIGH-LEVEL VOQ SENSITIVITY MODE LOCKR ADC-READOUT TC TCSQ Code 1 2 3 4 5 6 7 11 12 Data Bits 10 11 11 14 6 1 14 6 5 Format binary binary two compl. binary signed binary binary binary two compl. binary signed binary binary Customer read/write/program read/write/program read/write/program read/write/program read/write/program lock read read/write/program read/write/program Range and filter settings Lock Bit Remark off switching level on switching level 26 March 4, 2004; 6251-528-1DS Micronas DATA SHEET HAL1000 ADC-READOUT - This register is read only. - The register range is from -8192 up to 8191. 5.5. Register Information LOW-LEVEL - The register range is from 0 up to 1023. - The register value is calculated by: LOW-LEVEL = Low-Level Voltage VDD * 2048 5.6. Programming Information If the content of any register (except the lock registers) has to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands is not important. ERASE and PROM act on all registers in parallel. If all HAL1000 registers have to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. HIGH-LEVEL - The register range is from 0 up to 2047. - The register value is calculated by: HIGH-LEVEL = High-Level Voltage VDD * 2048 VOQ - The register range is from -1024 up to 1023. - The register value is calculated by: VOQ = VOQ VDD * 1024 Note: For production and qualification tests, it is recommended to set the LOCK bit after final adjustment and programming of the sensor. The LOCK function is active after the next power-up of the sensor. We recommend sending an additional ERASE command directly after sending the LOCK command. SENSITIVITY - The register range is from -8192 up to 8191. - The register value is calculated by: SENSITIVITY = Sensitivity * 2048 Note: Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. TC and TCSQ - The TC register range is from -31 up to 31. - The TCSQ register range is from 0 up to 31. Please refer Section 4.2. on page 21 for the recommended values. MODE - The register range is from 0 up to 63 and contains the settings for FILTER and RANGE: MODE = FILTER * 8 + RANGE Please refer to Section 2.2. on page 6 for the available FILTER and RANGE values. Micronas March 4, 2004; 6251-528-1DS 27 HAL1000 6. Data Sheet History 1. Advance Information: "HAL 1000 Programmable Hall Switch, May 31, 2000, 6251-528-1AI. First release of the advance information. 2. Data Sheet: "HAL1000 Programmable Hall Switch", March 4, 2004, 6251-528-1DS. First release of the data sheet. Major changes: - new package diagram for TO92UT-1 - package diagram for TO92UT-2 added - ammopack diagrams for TO92UT-1/-2 added DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-528-1DS All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. 28 March 4, 2004; 6251-528-1DS Micronas |
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